Surface-emitting semiconductor laser comprising a structured waveguide

Target of this invention is used for a single model performance of surface-emitting semiconductor laser, wherein a laser embedded tunnel combination, and tunnel to bundle layer (6) and cylinder; the diameter of the diameter (w1) and multiple, depth of the diameter of the n doped current transmission layer (7) cover, a between the adjacent current transmission layer (7) is provided with elevate the diameter of the component (15); the elevate the part elevate diameter part (w2) and elevates part depths. The target is realised by such structure; (7) is at least revolved is arranged in the current transmission layer elevates component (15) are of providing a structured layer (8); 9), Selecting to the structured layer (8); 9) (D3; d4), so the optical is at least is equal to the elevates the current transmission layer (7) optical is part has devices.