Nova Patents
AT354599T

Polymeric compositions and uses therefore

Abstract

The invention relates to polyepoxide, the production method of polyepoxide, and for use as a process for manufacturing the circuit the application method. A separate an embodiment, the present invention relates to the photoresist composition according at least one halogenide polycyclic monomer or hydrogen polycyclic polymerizing monomer is formed. The other of solution, invention relates to a at least one halogenide polycyclic monomer or hydrogen polycyclic bound to at least one of the photoresist composition according the halogenide of polyepoxide copolymer formed. , And the invention further relates to the photoresist composition for performing the treatment in order to obtain is one or more of: (1) By the polymer composition of optical density; A (2) by a polymer composition the content of residual metal and/or monomer. Moreover, the invention is also disclosed is a method for producing the invention photoresist composition according the catalyst system, wherein the catalyst system to control the photoresist product the molecular weight.

Term

No projected expiry on record.

  1. Priority
  2. Filed
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20 members in 10 offices

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Priority claims
DocumentOfficeKindDate
34052601United States of AmericaP

Members20

Family members, oldest first
DocumentOfficeKind
WO03050158A1World Intellectual Property Organization (WIPO)A1
AU2002358247A1AustraliaA1
US2003176583A1United States of AmericaA1
KR20040065209ARepublic of KoreaA
EP1461373A1European Patent Office (EPO)A1
CN1561355AChinaA
JP2005511833AJapanA
HK1071385A1Hong Kong, ChinaA1
US6949609B2United States of AmericaB2
US2006025540A1United States of AmericaA1
CN1253485CChinaC
CN1789300AChinaA
EP1461373B1European Patent Office (EPO)B1
AT354599TThis recordAustriaT
DE60218342D1GermanyD1
DE60218342T2GermanyT2
CN100413898CChinaC
KR100880313B1Republic of KoreaB1
US7612146B2United States of AmericaB2
JP4389158B2JapanB2