AT354176T
Method and composition for dry photoresist stripping in semiconductor fabrication
Abstract
(57) The method and composition which improve the selectivity of the etching rate of photograph レジト to the base material material in the dry type exfoliation process by the lower part microwave in the manufacturing process of a summary semiconductor integrated circuit (IC) were offered. The serious improvement about selectivity was obtained by adding N to the mixed gas for etching of O and CF.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
9 members in 7 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 99455297 | United States of America | A |
Members9
| Document | Office | Kind | |
|---|---|---|---|
| WO9933096A1 | World Intellectual Property Organization (WIPO) | A1 | |
| US6080680A | United States of America | A | |
| EP1053566A1 | European Patent Office (EPO) | A1 | |
| TW494492B | Taiwan Province of China | B | |
| JP2002531932A | Japan | A | |
| EP1053566B1 | European Patent Office (EPO) | B1 | |
| AT354176TThis record | Austria | T | |
| DE69837112D1 | Germany | D1 | |
| DE69837112T2 | Germany | T2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 98961796
Titles2
- German
- VERFAHREN UND ZUSAMMENSETZUNG ZUR ENTFERNUNG VON PHOTORESIST IN DER HALBLEITERFERTIGUNG
- English
- METHOD AND COMPOSITION FOR REMOVING PHOTORESIS IN SEMICONDUCTOR PRODUCTION
Classification
- CPC, 2
- G03F7/427
- H01L21/31138
- IPC, 4
- G03F7 42
- H01L21 302
- H01L21 3065
- H01L21 311