Segmented metal bitlines

The storage unit array structure of integrated - circuit is a metal bit line of the clapboard. The storing unit and right and device volatility storage unit, the floating gate, flash memory EEPROM, or a EPROM storage unit. Connection with the metal the memory cells bit line, and metal bit line of the clapboard. According to hopes according permits configuring (e.g., programming) or reading the storage unit is the each fragment turning on the voltage. The programming voltage can be is higher than the integrated - circuit VCC high voltage. By and metal bit line segment a fragment, wherein a fan between the position of the noise and improving performance and reliability, and each of the comparing a long metal bit line (i.e. fragments is test and a containing to a such operation) to reduce the parasitic capacitor to reduce the power consumption.