AT346410T

Silicon wafer with embedded optoelectronic material for monolithic oeic

Abstract

It is the structure of having the optical activity layer embedded to Si wafer, and the epitaxial layer of the outside exposed to CMOS processing equipment always serves as material corresponding to CMOS, such as Si or other SiO (s). Since the photoelectron layer is completely enclosed by Si, a wafer fully corresponds to standard SiCMOS manufacture. Since it is transparent, Si completely to the wavelength of a light longer than the band gap (1.1 micrometers) of Si a light signal, Between an embedding photoelectron layer and external 導波路 can be penetrated using either the usual incidence (Si board or a top Si cap layer is passed) or the incidence within a field (end combination).

Term

No projected expiry on record.

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22340700United States of AmericaP

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WO0213342A2World Intellectual Property Organization (WIPO)A2
AU7810501AAustraliaA
US2002040983A1United States of AmericaA1
US2002052061A1United States of AmericaA1
US2002066899A1United States of AmericaA1
US2002068396A1United States of AmericaA1
WO0213342A3World Intellectual Property Organization (WIPO)A3
EP1350290A2European Patent Office (EPO)A2
US6645829B2United States of AmericaB2
US6677655B2United States of AmericaB2
US6680495B2United States of AmericaB2
JP2004506336AJapanA
EP1350290B1European Patent Office (EPO)B1
AT346410TThis recordAustriaT
ATE346410T1AustriaT1
DE60124766D1GermanyD1
DE60124766T2GermanyT2
JP5066321B2JapanB2