Silicon wafer with embedded optoelectronic material for monolithic oeic
Abstract
It is the structure of having the optical activity layer embedded to Si wafer, and the epitaxial layer of the outside exposed to CMOS processing equipment always serves as material corresponding to CMOS, such as Si or other SiO (s). Since the photoelectron layer is completely enclosed by Si, a wafer fully corresponds to standard SiCMOS manufacture. Since it is transparent, Si completely to the wavelength of a light longer than the band gap (1.1 micrometers) of Si a light signal, Between an embedding photoelectron layer and external 導波路 can be penetrated using either the usual incidence (Si board or a top Si cap layer is passed) or the incidence within a field (end combination).
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
18 members in 7 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 22340700 | United States of America | P |
Members18
| Document | Office | Kind | |
|---|---|---|---|
| WO0213342A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU7810501A | Australia | A | |
| US2002040983A1 | United States of America | A1 | |
| US2002052061A1 | United States of America | A1 | |
| US2002066899A1 | United States of America | A1 | |
| US2002068396A1 | United States of America | A1 | |
| WO0213342A3 | World Intellectual Property Organization (WIPO) | A3 | |
| EP1350290A2 | European Patent Office (EPO) | A2 | |
| US6645829B2 | United States of America | B2 | |
| US6677655B2 | United States of America | B2 | |
| US6680495B2 | United States of America | B2 | |
| JP2004506336A | Japan | A | |
| EP1350290B1 | European Patent Office (EPO) | B1 | |
| AT346410TThis record | Austria | T | |
| ATE346410T1 | Austria | T1 | |
| DE60124766D1 | Germany | D1 | |
| DE60124766T2 | Germany | T2 | |
| JP5066321B2 | Japan | B2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 1956069
Titles2
- German
- SILIZIUMWAFER MIT MONOLITHISCHEN OPTOELEKTRONISCHEN KOMPONENTEN
- English
- SILICON WAIST WITH MONOLITHIC OPTOELECTRONIC COMPONENTS
Classification
- CPC, 28
- H01L33/26
- G02B6/12
- G02B6/12004
- G02B6/13
- G02B6/42
- G02B2006/12061
- G02B2006/12176
- H01L21/76256
- H01L25/167
- H01L27/12
- H01L27/14632
- H01L27/14634
- H01L27/15
- H01L31/1844
- H01L31/1852
- H01L33/0079
- H01L2221/68359
- H01L2221/68363
- H01L2924/0002
- H01S5/021
- H01S5/0215
- H01S5/0217
- H01S5/0218
- H01S5/026
- H01S5/0261
- H01L33/0093
- Y02E10/544
- Y10S438/902
- IPC, 15
- G02B6 12
- G02B6 13
- G02B6 42
- H01L21 02
- H01L21 20
- H01L21 762
- H01L25 16
- H01L27 12
- H01L27 15
- H01L29 26
- H01L31 18
- H01L33 00
- H01L33 26
- H01S5 02
- H01S5 026