Rhodium-rich oxygen barriers

The invention claims a forming integrated - circuits capacitor structure and method. The capacitor comprises rich rhodium structure (24), a rhodium oxide layer of rich rhodium structure (24) directly (26), a rhodium oxide layer (26) directly contacted capacitor dielectric (30) and electrode (40) is capacitor. The rich rhodium structure (24) can (30) is a high dielectric constant comprising a rhodium alloy and capacitor dielectric.