Ferroelectric memory

A pair of a ferroelectric memory (436), a bit line to (102,104), a line (103), wherein in The Weixian, and middle position, and been connected with the storage battery (100). The storage unit comprises two ferroelectric condensers (106,108), a capacitor (105,109) is connected with the transistor to the upper of online, a clock each capacitor (107) is further connected on the is connected with the transmission line. Are three transistors' electronic grids (123,136,128) is connected with the is vertical to the position of the word line of line and an line (101), wherein the word line with a been chosen, a capacitor totally with the micro variation isolation. With three units of input line (519, 516 and 518) is sense amplifier (502) and a battery bit line and deriving two virtual bit line (226,228) signal to compare. The storage unit is a non-destructive reading method is left of the reader, the ferroelectric different polarized state's ferroelectric capacitor with different capacitor, wherein the method is identifying different the capacitance realizing reader.