Multi-chip module semiconductor devices

The module multi-chip semiconductor device (1), at least one first metal tube core (20) is fixed on the lead frame (10) substrate portion (11) is. Inverts the IC tube core (30) (31) is fixed on the first convex electrode to at least one first tube core (20) are multiple electrode contacts (G, S), and the second convex electrode (32) is fixed to the lead frame type lead pipe pin (14) is. Inverts chip (30) integrated - circuit is set to any lead frame the base region is used for); the bulge electrode (31,32) for providing circuit connection of detection. The first tube core (20) can be a MOSFET power switch transistor, wherein gate drive circuit of inversion chip (30). Switching transistor network impedance can be connected by distributed parallel connected grid (G) to reduce; the grid is connected and further connected (S) is connected with the distributed in source, switching transistor network impedance and is fixed by are distributed power connection (VCC and GND) further reducing. The module may include two transistors of series connection (201,202), a negative electrode (31,32) control circuit is inverse chip (300), and for providing the dc-dc converter no need to strip connected with the connecting wire (181,182).