Dual laser cutting of wafers
Abstract
The method of cutting out a semiconductor wafer The 1st (302), The step which turns the 2nd (332) laser beams to the upper surface of the circuit board (100) ; A coating layer is crossed. It has a step from which the circuit board is cut with the 2nd laser beams along Step; which scans the 1st laser beams and forms the Sklar Eve line (102) of a coating layer, and the Sklar Eve line. This equipment contains the 1st laser with the 1st wavelength placed on the coating layer of the circuit board, and the 2nd laser (324) in which a wavelength has the 2nd wavelength that was placed on the surface of the circuit board unlike the 1st laser. The coating layer has the 1st absorption index to the wavelength of the 1st laser, and the semiconductor circuit board has the 2nd absorption index smaller than the 1st absorption index. The energy from the 1st laser beams is absorbed by the coating layer, the Sklar Eve line is formed, and the 2nd laser beams cut the circuit board along the Sklar Eve line.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
25 members in 7 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 86462001 | United States of America | A | |
| 0214471 | United States of America | W |
Members25
| Document | Office | Kind | |
|---|---|---|---|
| WO0075983A1 | World Intellectual Property Organization (WIPO) | A1 | |
| WO0075983B1 | World Intellectual Property Organization (WIPO) | B1 | |
| TW461045B | Taiwan Province of China | B | |
| US2001035401A1 | United States of America | A1 | |
| US2001054606A1 | United States of America | A1 | |
| US2002031899A1 | United States of America | A1 | |
| US6420245B1 | United States of America | B1 | |
| WO02076699A1 | World Intellectual Property Organization (WIPO) | A1 | |
| EP1255280A2 | European Patent Office (EPO) | A2 | |
| JP2002329686A | Japan | A | |
| WO02094528A1 | World Intellectual Property Organization (WIPO) | A1 | |
| TW512451B | Taiwan Province of China | B | |
| US6555447B2 | United States of America | B2 | |
| US6562698B2 | United States of America | B2 | |
| TW548733B | Taiwan Province of China | B | |
| EP1255280A3 | European Patent Office (EPO) | A3 | |
| EP1389158A1 | European Patent Office (EPO) | A1 | |
| TW578266B | Taiwan Province of China | B | |
| JP2004526335A | Japan | A | |
| EP1389158B1 | European Patent Office (EPO) | B1 | |
| AT301030TThis record | Austria | T | |
| ATE301030T1 | Austria | T1 | |
| DE60205360D1 | Germany | D1 | |
| DE60205360T2 | Germany | T2 | |
| JP2008066751A | Japan | A |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 2771821
Titles2
- German
- DUAL-LASERSCHNEIDEN VON SCHEIBEN
- English
- DUAL LASER CUTTING OF DISCS
Classification
- CPC, 14
- H01L21/78
- B23K26/0604
- B23K26/364
- B23K26/40
- B23K2201/40
- B23K2101/40
- B23K2203/50
- B23K2103/50
- B28D1/221
- B28D5/0011
- B28D5/022
- B28D5/029
- B28D5/04
- H01S5/0201
- IPC, 10
- B23K101 42
- B23K26 00
- B23K26 40
- B28D1 22
- B28D5 00
- B28D5 02
- B28D5 04
- H01L21 301
- H01L21 78
- H01S5 02