Nova Patents
AT301030T

Dual laser cutting of wafers

Abstract

The method of cutting out a semiconductor wafer The 1st (302), The step which turns the 2nd (332) laser beams to the upper surface of the circuit board (100) ; A coating layer is crossed. It has a step from which the circuit board is cut with the 2nd laser beams along Step; which scans the 1st laser beams and forms the Sklar Eve line (102) of a coating layer, and the Sklar Eve line. This equipment contains the 1st laser with the 1st wavelength placed on the coating layer of the circuit board, and the 2nd laser (324) in which a wavelength has the 2nd wavelength that was placed on the surface of the circuit board unlike the 1st laser. The coating layer has the 1st absorption index to the wavelength of the 1st laser, and the semiconductor circuit board has the 2nd absorption index smaller than the 1st absorption index. The energy from the 1st laser beams is absorbed by the coating layer, the Sklar Eve line is formed, and the 2nd laser beams cut the circuit board along the Sklar Eve line.

Term

No projected expiry on record.

  1. Priority
  2. Filed
  3. Granted
  4. Today

25 members in 7 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
86462001United States of AmericaA
0214471United States of AmericaW

Members25

Family members, oldest first
DocumentOfficeKind
WO0075983A1World Intellectual Property Organization (WIPO)A1
WO0075983B1World Intellectual Property Organization (WIPO)B1
TW461045BTaiwan Province of ChinaB
US2001035401A1United States of AmericaA1
US2001054606A1United States of AmericaA1
US2002031899A1United States of AmericaA1
US6420245B1United States of AmericaB1
WO02076699A1World Intellectual Property Organization (WIPO)A1
EP1255280A2European Patent Office (EPO)A2
JP2002329686AJapanA
WO02094528A1World Intellectual Property Organization (WIPO)A1
TW512451BTaiwan Province of ChinaB
US6555447B2United States of AmericaB2
US6562698B2United States of AmericaB2
TW548733BTaiwan Province of ChinaB
EP1255280A3European Patent Office (EPO)A3
EP1389158A1European Patent Office (EPO)A1
TW578266BTaiwan Province of ChinaB
JP2004526335AJapanA
EP1389158B1European Patent Office (EPO)B1
AT301030TThis recordAustriaT
ATE301030T1AustriaT1
DE60205360D1GermanyD1
DE60205360T2GermanyT2
JP2008066751AJapanA