AT299275T
Photoresist composition for deep uv radiation containing an additive
Abstract
The invention relates to's radiation sensitive optical resist composition to deep ultraviolet, and natural photoresist composition in 100-200 nm of range. The optical resist composition comprises a) by hand the resistance peroxide and comprises at least one acid instability two bases and a, a clock a base and device; ab) capable of generating acid composite when the radiating; With a) reducing the electronic and additive of ion pair photoresist image influence.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
15 members in 10 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 3716101 | United States of America | A | |
| 0211977 | European Patent Office (EPO) | W |
Members15
| Document | Office | Kind | |
|---|---|---|---|
| US2003087180A1 | United States of America | A1 | |
| WO03040826A1 | World Intellectual Property Organization (WIPO) | A1 | |
| US6723488B2 | United States of America | B2 | |
| EP1444551A1 | European Patent Office (EPO) | A1 | |
| JP2005508527A | Japan | A | |
| CN1623121A | China | A | |
| KR20050056913A | Republic of Korea | A | |
| EP1444551B1 | European Patent Office (EPO) | B1 | |
| AT299275TThis record | Austria | T | |
| ATE299275T1 | Austria | T1 | |
| DE60204980D1 | Germany | D1 | |
| TWI251122B | Taiwan Province of China | B | |
| DE60204980T2 | Germany | T2 | |
| CN1306340C | China | C | |
| MY130283A | Malaysia | A |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 2787514
Titles2
- German
- ADDITIV ENTHALTENDE PHOTORESISTZUSAMMENSETZUNG FÜR DIE DUV-LITHOGRAPHIE
- English
- ADDITIVELY CONTAINING PHOTORESIST COMPOSITION FOR DUV LITHOGRAPHY
Classification
- CPC, 4
- G03F7/0392
- G03F7/0397
- G03F7/40
- Y10S430/106
- IPC, 5
- G03F7 004
- G03F7 033
- G03F7 039
- G03F7 40
- H01L21 027