A semiconductor processing method for forming a contact pedestal for a storage node of a capacitor in integrated circuitry

(57) the semiconductor process method which forms a summary point-of-contact pedestal, (a) The process of preparing the node position (28) which should make electric connection, (b) The process of preparing insulated dielectric materials (30) on the above-mentioned node position, (c) Fully etch the insulated dielectric materials on the above-mentioned node position to the grade which does not expose the above-mentioned node position outside, The process of preparing the process of forming the contact opening which has a base, and the spacer layer which has the thickness which is not completely filled up with the above-mentioned contact opening on the insulated dielectric materials in (d) this contact opening, (e) The process of performing anisotropic etching to this spacer layer, and forming a side wall spacer (44) into the above-mentioned contact opening, (f) It has the process which etches into the base of the above-mentioned contact opening, and exposes the above-mentioned node position outside, the process of being filled up with the (g) above-mentioned point-of-contact opening by electric conduction material (56), and the process of making the (h) above-mentioned side wall spacer into conductivity.