Nova Patents
AT253132T

Silicon carbide gemstones

Abstract

The use of the depositing high hardness and artificial jewel is relatively low impurity concentration of single crystal according semi-transparent comprises silicon carbide during the sublimation growing furnace and. During cutting the concentrated gem, and a thick gem the gem finished product. A wherein the selective doped can be to obtain the wide of colour tone and crystal of the monocrystal growth process. The impure in the system in which does not need a and crystal said of can be a colorless gem.

Term

No projected expiry on record.

  1. Priority
  2. Filed
  3. Granted
  4. Today

27 members in 16 offices

This recordMember, by publication datePriority claim6 more offices are in the list below

Priority claims2

Priority claims
DocumentOfficeKindDate
52163595United States of AmericaA
9613760United States of AmericaW

Members27

Family members, oldest first
DocumentOfficeKind
CA2230262A1CanadaA1
WO9709470A2World Intellectual Property Organization (WIPO)A2
AU6902696AAustraliaA
WO9709470A3World Intellectual Property Organization (WIPO)A3
US5723391AUnited States of AmericaA
US5762896AUnited States of AmericaA
EP0853690A2European Patent Office (EPO)A2
EP0853690A4European Patent Office (EPO)A4
CN1194623AChinaA
KR19990044250ARepublic of KoreaA
JPH11507906AJapanA
AU710841B2AustraliaB2
HK1015423A1Hong Kong, ChinaA1
BR9610393ABrazilA
RU2156330C2Russian FederationC2
CA2230262CCanadaC
KR100331201B1Republic of KoreaB1
CN1093085CChinaC
JP3422422B2JapanB2
EP0853690B1European Patent Office (EPO)B1
AT253132TThis recordAustriaT
ATE253132T1AustriaT1
DE69630535D1GermanyD1
DK0853690T3DenmarkT3
PT853690EPortugalE
ES2207682T3SpainT3
DE69630535T2GermanyT2