AT253132T
Silicon carbide gemstones
Abstract
The use of the depositing high hardness and artificial jewel is relatively low impurity concentration of single crystal according semi-transparent comprises silicon carbide during the sublimation growing furnace and. During cutting the concentrated gem, and a thick gem the gem finished product. A wherein the selective doped can be to obtain the wide of colour tone and crystal of the monocrystal growth process. The impure in the system in which does not need a and crystal said of can be a colorless gem.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
27 members in 16 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 52163595 | United States of America | A | |
| 9613760 | United States of America | W |
Members27
| Document | Office | Kind | |
|---|---|---|---|
| CA2230262A1 | Canada | A1 | |
| WO9709470A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU6902696A | Australia | A | |
| WO9709470A3 | World Intellectual Property Organization (WIPO) | A3 | |
| US5723391A | United States of America | A | |
| US5762896A | United States of America | A | |
| EP0853690A2 | European Patent Office (EPO) | A2 | |
| EP0853690A4 | European Patent Office (EPO) | A4 | |
| CN1194623A | China | A | |
| KR19990044250A | Republic of Korea | A | |
| JPH11507906A | Japan | A | |
| AU710841B2 | Australia | B2 | |
| HK1015423A1 | Hong Kong, China | A1 | |
| BR9610393A | Brazil | A | |
| RU2156330C2 | Russian Federation | C2 | |
| CA2230262C | Canada | C | |
| KR100331201B1 | Republic of Korea | B1 | |
| CN1093085C | China | C | |
| JP3422422B2 | Japan | B2 | |
| EP0853690B1 | European Patent Office (EPO) | B1 | |
| AT253132TThis record | Austria | T | |
| ATE253132T1 | Austria | T1 | |
| DE69630535D1 | Germany | D1 | |
| DK0853690T3 | Denmark | T3 | |
| PT853690E | Portugal | E | |
| ES2207682T3 | Spain | T3 | |
| DE69630535T2 | Germany | T2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Publication of translation of european patent specificationUEP | UEP |
Numbers
- Application
- 96929751
Titles2
- German
- EDELSTEINE AUS SILIZIUMKARBID
- English
- GEMSTONES OF SILICON CARBIDE
Classification
- CPC, 2
- C30B23/00
- C30B29/36
- IPC, 6
- A44C17 00
- C01B31 36
- C01B33 00
- C30B23 00
- C30B29 36
- C30B33 00