Plasma activated cvd method and device for producing a microcristalline si:h layer

The invention relates to a plasma CVD method and an apparatus for producing a microcrystalline Si: H layer on a substrate and the use thereof, in particular their use as thin-film solar cell, wherein the microcrystalline Si: H layer by treating an amorphous Si: H layer is produced with a hydrogen plasma. The plasma CVD method in this case has the following steps: DOLLAR A - plasma enhanced CVD coating in the pulse mode (plasma impulse CVD, PICVD) at least one thin amorphous Si: H layer on the substrate, DOLLAR A - plasma enhanced in the treatment of the amorphous Si-pulse mode: H layer with a hydrogen plasma, the amorphous Si: H layer in a microcrystalline Si: H layer is umngewandelt and DOLLAR a - optionally repeating the first two steps.