Method of depositing thin group iiia metal films

A wherein the high-purity the) acrylate group OF metal layer deposition the method is substrate, comprising a substrate and tertiary butyl compound with of) acrylate group OF metal, and then of the compound, is arranged on the deposition of the substrate the )acrylate A metal element. Method of the invention can be used in any suitable substrate, to silicon and polyimide. Method of the invention can be used for ) acrylate group OF metal and/or the growth of silicon alloy, and reacting for the semiconductor according to claim alloy, each to AlGaAs, AlInAs and depositing a bond of alloy.