Nova Patents
AT213562T

Method of programming a flash EEPROM memory cell optimized for low power consumption and a method for erasing said cell

Abstract

This record has no abstract on file.

Term

No projected expiry on record.

  1. Priority
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40 members in 9 offices

This recordMember, by publication datePriority claim

Priority claims1

Priority claims
DocumentOfficeKindDate
219795United States of AmericaP

Members40

Family members, oldest first
DocumentOfficeKind
KR920015561ARepublic of KoreaA
EP0501941A1European Patent Office (EPO)A1
BE1004424A3BelgiumA3
JPH0582794AJapanA
EP0501941B1European Patent Office (EPO)B1
EP0740306A2European Patent Office (EPO)A2
EP0740306A3European Patent Office (EPO)A3
AT144651TAustriaT
ATE144651T1AustriaT1
DE69214688D1GermanyD1
US5583810AUnited States of AmericaA
US5583811AUnited States of AmericaA
ES2095453T3SpainT3
EP0762429A2European Patent Office (EPO)A2
DK0501941T3DenmarkT3
DE69214688T2GermanyT2
US5841697AUnited States of AmericaA
EP0762429A3European Patent Office (EPO)A3
US5969991AUnited States of AmericaA
US6009013AUnited States of AmericaA
US6044015AUnited States of AmericaA
EP0740306B1European Patent Office (EPO)B1
AT195034TAustriaT
ATE195034T1AustriaT1
DE69231300D1GermanyD1
ES2150053T3SpainT3
KR100280051B1Republic of KoreaB1
DE69231300T2GermanyT2
US6243293B1United States of AmericaB1
US6282124B1United States of AmericaB1
JP3236054B2JapanB2
EP0762429B1European Patent Office (EPO)B1
AT213562TThis recordAustriaT
ATE213562T1AustriaT1
EP1189238A1European Patent Office (EPO)A1
DE69619321D1GermanyD1
DE69619321T2GermanyT2
EP1189238B1European Patent Office (EPO)B1
DE69636178D1GermanyD1
DE69636178T2GermanyT2