Vertical interconnect process for silicon segments

(57) The method and equipment which carry out interconnection of the silicon segment (36) by which summary lamination was carried out perpendicularly are indicated. Each segment (36) contains two or more adjoining dies on a semiconductor wafer. In order to offer the marginal connection pad (42) for an external electrical link point, interconnection of two or more dies on a segment is carried out using the interconnection of one or more layers of the metal extended to all the four side of segments. Each segment is cut from the back of a wafer by slope cutting, and the edge wall (102) which inclines on each segment (36) in the inner direction of four is offered. After a segment is cut from a wafer, a segment is allotted to the mutual upper part and forms lamination (112). Interconnection of the adjoining segment (36) in lamination (112) and on perpendicular is electrically carried out by using the conductive remains (130) of epoxy for all the four side of laminations electrically. The edge wall (102) which inclines to each inner direction of the segment (36) in lamination (112) offers 凹所 by which conductive epoxy approaches the circuit of a marginal connection pad and each segment electrically, if a segment is laminated.