AT199049T

Method of obtaining high quality silicon dioxide passivation on silicon carbide

Abstract

This record has no abstract on file.

Term

No projected expiry on record.

  1. Priority
  2. Filed
  3. Granted
  4. Today

27 members in 10 offices

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Priority claims2

Priority claims
DocumentOfficeKindDate
89364292United States of AmericaA
20523093JapanA

Members27

Family members, oldest first
DocumentOfficeKind
EP0637069A1European Patent Office (EPO)A1
JPH0766192AJapanA
US5459107AUnited States of AmericaA
US5612260AUnited States of AmericaA
US5629531AUnited States of AmericaA
CA2251737A1CanadaA1
WO9739485A1World Intellectual Property Organization (WIPO)A1
AU2667597AAustraliaA
US5776837AUnited States of AmericaA
EP0894339A1European Patent Office (EPO)A1
KR20000005452ARepublic of KoreaA
JP2000508477AJapanA
JP3060434B2JapanB2
EP0637069B1European Patent Office (EPO)B1
AT199049TThis recordAustriaT
ATE199049T1AustriaT1
DE69329905D1GermanyD1
DE69329905T2GermanyT2
ES2155828T3SpainT3
US6344663B1United States of AmericaB1
EP0894339B1European Patent Office (EPO)B1
AT262733TAustriaT
ATE262733T1AustriaT1
DE69728259D1GermanyD1
DE69728259T2GermanyT2
ES2213822T3SpainT3
CA2251737CCanadaC