Solid-state memory device

The invention relates to a semiconductor memory apparatus, comprising a massive memory cells (3), is arranged on the semiconductor substrate bit line and a word line the crossing point, a programming data content, which are connected through a character line of driving circuit (4) and a units of - circuit drive circuit (5) is a. The storage unit (12,14), which is a bit line (9,10,13) device, and by the position of the drive circuit (11) is composed, and position of the drive circuit (11) is arranged; and a separated and a position of the drive circuit (5) irrelevant is a, the storage unit (12,14) is ends to the memory cells of word line (3), and can be added to terminals of the sum, a time of the beforehand of the memory cells of a word line (3).