AT130703T
Etching method for obtaining at least one cavity in a substrate and substrate obtained by such method.
Abstract
This record has no abstract on file.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
12 members in 10 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 87290 | Switzerland | A |
Members12
| Document | Office | Kind | |
|---|---|---|---|
| CA2053859A1 | Canada | A1 | |
| WO9114281A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU7475491A | Australia | A | |
| EP0472702A1 | European Patent Office (EPO) | A1 | |
| JPH04506727A | Japan | A | |
| CH682528A5 | Switzerland | A5 | |
| US5316618A | United States of America | A | |
| EP0472702B1 | European Patent Office (EPO) | B1 | |
| AT130703TThis record | Austria | T | |
| DE69114786D1 | Germany | D1 | |
| ES2080304T3 | Spain | T3 | |
| DE69114786T2 | Germany | T2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 91906200
Titles2
- German
- VERFAHREN ZUM ÄTZEN VON MINDESTENS EINER VERTIEFUNG IN EINEM SUBSTRAT UND DADURCH ERHALTENES SUBSTRAT.
- English
- METHOD FOR Etching AT LEAST ONE SUBSTRATE AND THEREFORE RECEIVED SUBSTRATE.
Classification
- CPC, 3
- H01L21/3083
- H01H1/0036
- H01L21/30608
- IPC, 3
- H01H1 00
- H01L21 306
- H01L21 308